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PMDPB80XP Dataheets PDF



Part Number PMDPB80XP
Manufacturers nexperia
Logo nexperia
Description dual P-channel MOSFET
Datasheet PMDPB80XP DatasheetPMDPB80XP Datasheet (PDF)

PMDPB80XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 30 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated for low voltage gate drive  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Ex.

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PMDPB80XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 30 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated for low voltage gate drive  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC/DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A Static characteristics (per transistor) RDSon drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C resistance - 80 102 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMDPB80XP 20 V, dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 D1 drain TR1 D2 drain TR2 3. Ordering information Simplified outline 654 Graphic symbol D1 D2 78 123 Transparent top view SOT1118 (DFN2020-6) G1 S1 S2 G2 017aaa258 Table 3. Ordering information Type number Package Name PMDPB80XP DFN2020-6 Description plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals 4. Marking Version SOT1118 Table 4. Marking codes Type number PMDPB80XP Marking code 1U PMDPB80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2012 © Nexperia B.V. 2017. All rights reserved 2 of 15 Nexperia PMDPB80XP 20 V, dual P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Source-drain diode IS source current Per device Tj junction temperature Tamb ambient temperature Tstg storage temperature Tsp = 25 °C Tamb = 25 °C [1] [1] [1] [2] [1] [1] Min Max Unit - -20 V -12 12 V - -3.7 A - -2.7 A - -1.7 A - -11 A - 485 mW - 1100 mW - 6250 mW - -1.1 A -55 150 °C -55 150 °C -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 120 Pder (%) 80 017aaa123 120 Ider (%) 80 017aaa124 40 40 0 −75 −25 25 75 125 175 Tj (°C) 0 −75 −25 25 75 125 175 Tj (°C) Fig 1. Normalized total power dissipation as a function of junction temperature Fig 2. Normalized continuous drain current as a function of junction temperature PMDPB80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2012 © Nexperia B.V. 2017. All rights reserved 3 of 15 Nexperia PMDPB80XP 20 V, dual P-channel Trench MOSFET -102 ID (A) -10 -1 -10-1 Limit RDSon = VDS/ID DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 6 cm2 017aaa563 tp = 10 μs tp = 100 μs tp = 10 ms tp = 100 ms -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per transistor Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point Conditions in free air in free air; t ≤ 5 s in free air Min Typ Max Unit [1] [2] [2] - - 225 260 K/W 99 115 K/W 54 62 K/W 16 20 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB80XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2012 © Nexperia B.V. 2017. All rights reserved 4 of 15 Nexperia PMDPB80XP 20 V, dual P-channel Trench MOSFET 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 1 0 017aaa564 1.


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