Document
PMDPB80XP
20 V, dual P-channel Trench MOSFET
Rev. 1 — 30 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for low voltage gate drive
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1.3 Applications
Charging switch for portable devices DC/DC converters Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C resistance
- 80 102 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMDPB80XP
20 V, dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8
Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 D1 drain TR1 D2 drain TR2
3. Ordering information
Simplified outline
654
Graphic symbol
D1 D2
78
123 Transparent top view
SOT1118 (DFN2020-6)
G1 S1
S2 G2 017aaa258
Table 3. Ordering information
Type number
Package
Name
PMDPB80XP
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals
4. Marking
Version SOT1118
Table 4. Marking codes Type number PMDPB80XP
Marking code 1U
PMDPB80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 May 2012
© Nexperia B.V. 2017. All rights reserved
2 of 15
Nexperia
PMDPB80XP
20 V, dual P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Source-drain diode
IS source current
Per device
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Tsp = 25 °C Tamb = 25 °C
[1] [1] [1]
[2] [1]
[1]
Min Max Unit
- -20 V -12 12 V - -3.7 A - -2.7 A - -1.7 A - -11 A - 485 mW - 1100 mW - 6250 mW
- -1.1 A
-55 150 °C -55 150 °C -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120
Pder (%)
80
017aaa123
120
Ider (%)
80
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40 40
0 −75 −25
25
75 125 175 Tj (°C)
0 −75 −25
25
75 125 175 Tj (°C)
Fig 1. Normalized total power dissipation as a function of junction temperature
Fig 2. Normalized continuous drain current as a function of junction temperature
PMDPB80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 May 2012
© Nexperia B.V. 2017. All rights reserved
3 of 15
Nexperia
PMDPB80XP
20 V, dual P-channel Trench MOSFET
-102 ID (A)
-10
-1
-10-1
Limit RDSon = VDS/ID
DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 6 cm2
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tp = 10 μs tp = 100 μs tp = 10 ms tp = 100 ms
-10-2 -10-1
-1
-10 -102 VDS (V)
IDM = single pulse
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
in free air
in free air; t ≤ 5 s in free air
Min Typ Max Unit
[1] [2] [2] -
-
225 260 K/W 99 115 K/W 54 62 K/W 16 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 May 2012
© Nexperia B.V. 2017. All rights reserved
4 of 15
Nexperia
PMDPB80XP
20 V, dual P-channel Trench MOSFET
103
Zth(j-a) (K/W)
102
duty cycle = 1
0.75
0.33 0.2
0.5 0.25
0.1
10 0.05
0.02
0.01
1 0
017aaa564
1.