PMDPB95XNE2

PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 14 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction EletroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C resistance Min Typ Max Unit -- -12 - [1] - - 30 V 12 V 3A - 77 99 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 d...