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PMDT290UCE Dataheets PDF



Part Number PMDT290UCE
Manufacturers nexperia
Logo nexperia
Description N/P-channel MOSFET
Datasheet PMDT290UCE DatasheetPMDT290UCE Datasheet (PDF)

PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver .

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PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C resistance TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current TR2 (P-channel) Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C [1] [1] Min - - -8 - -8 - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Typ Max Unit 290 380 mΩ 0.67 0.85 Ω - 20 V - 8V - 800 mA - -20 V - 8V - -550 mA Nexperia PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 Simplified outline 654 123 SOT666 Graphic symbol D1 D2 G1 G2 S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name PMDT290UCE - 4. Marking Description plastic surface-mounted package; 6 leads Table 4. Marking codes Type number PMDT290UCE 5. Limiting values Marking code AF Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions TR1 (N-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C TR1 (N-channel), Source-drain diode IS source current TR1 N-channel), ESD maximum rating VESD electrostatic discharge voltage Tsp = 25 °C Tamb = 25 °C HBM PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 [1] [1] [2] [1] [1] [3] Version SOT666 Min Max Unit - 20 V -8 8 V - 800 mA - 500 mA - 3.2 A - 330 mW - 390 mW - 1090 mW - 370 mA - 2000 V © Nexperia B.V. 2017. All rights reserved 2 of 20 Nexperia PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions TR2 (P-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C TR2 (P-channel), Source-drain diode IS source current TR2 (P-channel), ESD maximum rating VESD Per device electrostatic discharge voltage Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tsp = 25 °C Tamb = 25 °C HBM Tamb = 25 °C [1] [1] [2] [1] [1] [3] [2] Min -8 - - - -55 -55 -65 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [3] Measured between all pins. Max Unit -20 8 -550 -350 -2.2 330 390 1090 V V mA mA A mW mW mW -370 mA 2000 V 500 mW 150 °C 150 °C 150 °C 120 Pder (%) 80 017aaa123 120 Ider (%) 80 017aaa124 40 40 0 −75 −25 25 75 125 175 Tj (°C) 0 −75 −25 25 75 125 175 Tj (°C) Fig 1. Normalized total power dissipation as a function of junction temperature Fig 2. Normalized continuous drain current as a function of junction temperature PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © Nexperia B.V. 2017. All rights reserved 3 of 20 Nexperia PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 10 ID (A) 1 Limit RDSon = VDS/ID 017aaa361 (1) 10–1 (2) (3) (4) (5) 10–2 10–1 1 10 102 VDS (V) IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage –10 ID (A) –1 .


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