Document
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver
Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C resistance
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C resistance
TR1 (N-channel)
VDS drain-source voltage VGS gate-source voltage ID drain current TR2 (P-channel)
Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] [1]
Min
-
-
-8 -
-8 -
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Typ Max Unit
290 380 mΩ
0.67 0.85 Ω
- 20 V - 8V - 800 mA
- -20 V - 8V - -550 mA
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1
Simplified outline
654
123
SOT666
Graphic symbol
D1
D2
G1
G2
S1 S2 017aaa262
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMDT290UCE
-
4. Marking
Description plastic surface-mounted package; 6 leads
Table 4. Marking codes Type number PMDT290UCE
5. Limiting values
Marking code AF
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
TR1 (N-channel), Source-drain diode
IS source current TR1 N-channel), ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C Tamb = 25 °C HBM
PMDT290UCE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 October 2011
[1] [1] [2] [1]
[1] [3]
Version SOT666
Min Max Unit
- 20 V
-8 8
V
- 800 mA
- 500 mA
- 3.2 A
- 330 mW
- 390 mW
- 1090 mW
- 370 mA
- 2000 V
© Nexperia B.V. 2017. All rights reserved
2 of 20
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
TR2 (P-channel), Source-drain diode
IS source current TR2 (P-channel), ESD maximum rating
VESD Per device
electrostatic discharge voltage
Ptot Tj Tamb Tstg
total power dissipation junction temperature ambient temperature storage temperature
Tsp = 25 °C Tamb = 25 °C HBM Tamb = 25 °C
[1] [1] [2] [1]
[1] [3] [2]
Min
-8 -
-
-
-55 -55 -65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [3] Measured between all pins.
Max Unit
-20 8 -550 -350 -2.2 330 390 1090
V V mA mA A mW mW mW
-370 mA
2000 V
500 mW 150 °C 150 °C 150 °C
120
Pder (%)
80
017aaa123
120
Ider (%)
80
017aaa124
40 40
0 −75 −25
25
75 125 175 Tj (°C)
0 −75 −25
25
75 125 175 Tj (°C)
Fig 1. Normalized total power dissipation as a function of junction temperature
Fig 2. Normalized continuous drain current as a function of junction temperature
PMDT290UCE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 October 2011
© Nexperia B.V. 2017. All rights reserved
3 of 20
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
10
ID (A)
1
Limit RDSon = VDS/ID
017aaa361 (1)
10–1
(2)
(3) (4)
(5)
10–2 10–1
1
10 102 VDS (V)
IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage
–10
ID (A)
–1
.