PMDT670UPE

PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per transistor) Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C RDSon drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C resistance [1] Min Typ Max Unit --8 -- -20 V 8V -550 mA - 0.67 0.85 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 Simplified outline 654 123 SOT666 Graphic symbol D1 D2 G1 G2 S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package Name PMDT670UPE - 4. Marking Des...