STBV32
High voltage fast-switching NPN power transistor
Features
■ High voltage capability ■ Low spread of dynamic para...
STBV32
High voltage fast-switching
NPN power
transistor
Features
■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Applications
■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound.
TO-92
TO-92AP
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes STBV32 STBV32G STBV32-AP STBV32G-AP
Marking BV32 BV32G BV32 BV32G
Package TO-92 TO-92
TO-92AP TO-92AP
July 2008
Rev 8
Packaging Bulk Bulk
Ammopack Ammopack
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Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol
Parameter
VCES VCEO VEBO
IC
ICM IB IBM PTOT Tstg TJ
Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms) Collector current (f ≥ 100 Hz, duty-cycle ≤ 50%, TC = 25 °C) Collector peak current (tP < 5 ms) Base current
Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case__________max
STB...