PMFPB8032XP

PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits 1.8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA Schottky diode 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A Schottky diode IF forward current Tsp ≤ 105 °C - - 2A VR reverse voltage Tamb = 25 °C - - 20 V MOSFET transistor static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C resistance - 80 102 mΩ Nexperia PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Schottky diode VF forward voltage Cond...