PMG85XP

PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tj = 25 °C VGS = -4.5 V; ID = -2 A; Tj = 25 °C Min Typ Max Unit - - -20 V -12 - 12 V [1] - - -2 A - 90 115 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMG85XP 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D drain D drain G gate S source D drain D drain 3. Ordering information Simplified outline 654 123 SOT363 (TSSOP6) Graphic symbol D G S 017aaa094 Table 3. Ordering information Type number Package Name PMG85XP TSSOP6 4. Marking Description plastic surface-mounted package; 6 leads Version SOT363 Table 4. Marking codes Type number PMG85XP [1] % = placeholder for ma...