PMGD175XNE
30 V, Dual N-channel Trench MOSFET
15 April 2016
Product data sheet
1. General description
Dual N-channel e...
PMGD175XNE
30 V, Dual N-channel Trench MOSFET
15 April 2016
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per
transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
Static characteristics (per
transistor)
RDSon
drain-source on-state VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C resistance
Min Typ Max Unit
--
-12 -
[1] -
-
30 V 12 V 0.95 A
- 211 252 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMGD175XNE
30 V, Dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1
Simplified outline
654
Graphic symbol
D1
D2
123
TSSOP6 (SOT363)
G1
G2
S1 S2 017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMGD175XNE
TSSOP6
Description plastic ...