PMH1200UPE
30 V, P-channel Trench MOSFET
6 February 2023
Product data sheet
1. General description
P-channel enhanceme...
PMH1200UPE
30 V, P-channel Trench MOSFET
6 February 2023
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -410 mA; Tj = 25 °C resistance
Min Typ Max
-
-
-30
-10 -
10
-
-
-520
-
1.3 1.6
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Unit V V mA
Ω
Nexperia
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
PMH1200UPE
30 V, P-channel Trench MOSFET
Simplified outline
2
1
3
Graphic symbol
D
G
Transparent top view
DFN0606-3 (SOT8001)
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMH1200UPE
DFN0606...