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PMH550UNE Dataheets PDF



Part Number PMH550UNE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMH550UNE DatasheetPMH550UNE Datasheet (PDF)

PMH550UNE 30 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.

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PMH550UNE 30 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 770 mA; Tj = 25 °C resistance Min Typ Max - - 30 -8 - 8 - - 770 - 550 670 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Unit V V mA mΩ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain PMH550UNE 30 V, N-channel Trench MOSFET Simplified outline 2 1 3 Graphic symbol D G Transparent top view DFN0606-3 (SOT8001) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMH550UNE DFN0606-3 Description plastic, leadless ultra small package; 3 terminals; body 0.62 x 0.62 x 0.37 mm Version SOT8001 7. Marking Table 4. Marking codes Type number PMH550UNE pin 1 indication Marking code 0001 0010 reading direction reading example: 1011 1101 last 4 digits: 1101 marking code (example) reading direction Fig. 1. DFN0606-3 (SOT8001) binary marking code description first 4 digits: 1011 aaa-035663 PMH550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2023 © Nexperia B.V. 2023. All rights reserved 2 / 14 Nexperia PMH550UNE 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max VDS drain-source voltage Tj = 25 °C - 30 VGS gate-source voltage -8 8 ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 770 VGS = 4.5 V; Tamb = 100 °C [1] - 485 IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 3 Ptot total power dissipation Tamb = 25 °C [2] - 380 [1] - 710 Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode Tsp = 25 °C - 2.8 -55 150 -55 150 -65 150 IS source current Tamb = 25 °C [1] - 680 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, ti.


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