Document
PMH550UNE
30 V, N-channel Trench MOSFET
6 February 2023
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 770 mA; Tj = 25 °C resistance
Min Typ Max
-
-
30
-8
-
8
-
-
770
-
550 670
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Unit V V mA
mΩ
Nexperia
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
PMH550UNE
30 V, N-channel Trench MOSFET
Simplified outline
2
1
3
Graphic symbol
D
G
Transparent top view
DFN0606-3 (SOT8001)
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMH550UNE
DFN0606-3
Description
plastic, leadless ultra small package; 3 terminals; body 0.62 x 0.62 x 0.37 mm
Version SOT8001
7. Marking
Table 4. Marking codes Type number PMH550UNE
pin 1 indication
Marking code 0001 0010
reading direction
reading example: 1011 1101
last 4 digits: 1101
marking code (example)
reading direction
Fig. 1. DFN0606-3 (SOT8001) binary marking code description
first 4 digits: 1011 aaa-035663
PMH550UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 February 2023
© Nexperia B.V. 2023. All rights reserved
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Nexperia
PMH550UNE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
VDS
drain-source voltage
Tj = 25 °C
-
30
VGS
gate-source voltage
-8
8
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
770
VGS = 4.5 V; Tamb = 100 °C
[1]
-
485
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
3
Ptot
total power dissipation Tamb = 25 °C
[2]
-
380
[1]
-
710
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
Tsp = 25 °C
-
2.8
-55 150
-55 150
-65 150
IS
source current
Tamb = 25 °C
[1]
-
680
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, ti.