PMN16XNE

PMN16XNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1400 mW ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 6.9 A; Tj = 25 °C Min Typ Max Unit - - 20 V -12 - 12 V [1] - - 9.1 A - 15 19 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMN16XNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMN16XNE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking code...