PMN230ENE

PMN230ENE 60 V, N-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 1.6 A; Tj = 25 °C Min Typ Max - - 60 -20 - 20 [1] - - 2 - 176 222 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMN230ENE 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMN230ENE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking codes Type number P...