PMN28UNE
20 V, N-channel Trench MOSFET
16 April 2018
Product data sheet
1. General description
N-channel enhancement m...
PMN28UNE
20 V, N-channel Trench MOSFET
16 April 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 5.5 A; Tj = 25 °C
Min Typ Max
- - 20
-8 -
8
[1] - - 7.1
- 24 32
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
PMN28UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN28UNE
TSOP6
Description plastic, surface-mounted package (SC-74)
Version SOT457
7. Marking
Table 4. Marking codes Type number PMN28UNE
Mar...