PMN30ENEA
40 V N-channel Trench MOSFET
2 April 2019
Product data sheet
1. General description
N-channel enhancement mo...
PMN30ENEA
40 V N-channel Trench MOSFET
2 April 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 5.4 A; Tj = 25 °C
Min Typ Max
- - 40
-20 -
20
[1] - - 5.4
- 23 30
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
PMN30ENEA
40 V N-channel Trench MOSFET
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN30ENEA
TSOP6
Description plastic surface-mounted package (TSOP6); 6 leads
Version SOT457
7. Markin...