PMN30XP

PMN30XP 20 V, P-channel Trench MOSFET 23 February 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1400 mW 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -6.8 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -5.2 A; Tj = 25 °C resistance - 30 34 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMN30XP 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 123 TSOP6 (SOT457) Graphic symbol D G S 017aaa257 6. Ordering information Table 3. Ordering information Type number Package Name PMN30XP TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking codes Type number PMN30XP Marking code 3A PMN30XP Product data she...