PMN30XPE

PMN30XPE 20 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Enhanced power dissipation capability of 1390 mW 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -12 - 12 ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -7 Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -5.3 A; Tj = 25 °C resistance - 28 34 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMN30XPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMN30XPE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table ...