Document
PMN40ENE
30 V, N-channel Trench MOSFET
24 May 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Logic-level compatible • Very fast switching • Enhanced power dissipation capability of 1240 mW • ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 4.5 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 5.7 A
- 30 38 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN40ENE
TSOP6
Description plastic surface-mounted package (TSOP6); 6 leads
Version SOT457
7. Marking
Table 4. Marking codes Type number PMN40ENE
Marking code H4
PMN40ENE
Product data sheet
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24 May 2016
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Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C Tamb = 25 °C
[1] [1] [1] [2] [1]
[1]
Min Max Unit - 30 V
-20 20
V
- 5.7 A
- 4.5 A
- 2.9 A
- 18 A
- 530 mW
- 1.24 W - 4.46 W
-55 150 °C
-55 150 °C
-65 150 °C
- 1.2 A
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
017aaa123
120
017aaa124
Pder (%)
Ider (%)
80 80
40 40
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
PMN40ENE
Product data sheet
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24 May 2016
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
102 ID (A)
10
Limit RDSon = VDS/ID
1
DC; Tsp = 25 °C
10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
aaa-020809
tp = 10 µs
100 µs 1 ms 10 ms 100 ms
10-2 10-1
IDM = single pulse
1
10 102 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMN40ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 May 2016
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Rth(j-sp)
Thermal characteristics Parameter
Conditions
thermal resistance from junction to ambient
in free air in free air; t ≤ 5 s
thermal resistance from junction to solder point
Min Typ Max Unit
[1] -
205 235 K/W
[2] -
88 101 K/W
[2] -
55 63 K/W
- 24 28 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
Zth(j-a) (K/W)
102
10
duty cycle = 1 0.75
0.5 0.33
0.25 0.2 0.1
0.05 0.02
0 0.01
aaa-020616
1 10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN40ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 May 2016
© Nexperia B.V. 2017. All rights reserved
5 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
103
Zth(j-a) (K/W)
102 duty cycle = 1 0.75
0.5 0.33
0.25 0.2
0.1 10 0.05
0
0.02 0.01
aaa-020617
1 10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 6 cm2
1
10 10.