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PMN40ENE Dataheets PDF



Part Number PMN40ENE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMN40ENE DatasheetPMN40ENE Datasheet (PDF)

PMN40ENE 30 V, N-channel Trench MOSFET 24 May 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • Enhanced power dissipation capability of 1240 mW • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • LED driver • Power ma.

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PMN40ENE 30 V, N-channel Trench MOSFET 24 May 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • Enhanced power dissipation capability of 1240 mW • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 4.5 A; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 5.7 A - 30 38 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMN40ENE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMN40ENE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking codes Type number PMN40ENE Marking code H4 PMN40ENE Product data sheet All information provided in this document is subject to legal disclaimers. 24 May 2016 © Nexperia B.V. 2017. All rights reserved 2 / 16 Nexperia PMN40ENE 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current Tsp = 25 °C Tamb = 25 °C [1] [1] [1] [2] [1] [1] Min Max Unit - 30 V -20 20 V - 5.7 A - 4.5 A - 2.9 A - 18 A - 530 mW - 1.24 W - 4.46 W -55 150 °C -55 150 °C -65 150 °C - 1.2 A [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 120 017aaa123 120 017aaa124 Pder (%) Ider (%) 80 80 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature PMN40ENE Product data sheet All information provided in this document is subject to legal disclaimers. 24 May 2016 © Nexperia B.V. 2017. All rights reserved 3 / 16 Nexperia PMN40ENE 30 V, N-channel Trench MOSFET 102 ID (A) 10 Limit RDSon = VDS/ID 1 DC; Tsp = 25 °C 10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 aaa-020809 tp = 10 µs 100 µs 1 ms 10 ms 100 ms 10-2 10-1 IDM = single pulse 1 10 102 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMN40ENE Product data sheet All information provided in this document is subject to legal disclaimers. 24 May 2016 © Nexperia B.V. 2017. All rights reserved 4 / 16 Nexperia PMN40ENE 30 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air in free air; t ≤ 5 s thermal resistance from junction to solder point Min Typ Max Unit [1] - 205 235 K/W [2] - 88 101 K/W [2] - 55 63 K/W - 24 28 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0 0.01 aaa-020616 1 10-3 10-2 FR4 PCB, standard footprint 10-1 1 10 102 103 tp (s) Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN40ENE Product data sheet All information provided in this document is subject to legal disclaimers. 24 May 2016 © Nexperia B.V. 2017. All rights reserved 5 / 16 Nexperia PMN40ENE 30 V, N-channel Trench MOSFET 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0 0.02 0.01 aaa-020617 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for drain 6 cm2 1 10 10.


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