PMN48XP

PMN48XP 20 V, 4.1 A P-channel Trench MOSFET Rev. 1 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low RDSon  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C -- -12 - [1] - - -20 V 12 V -4.1 A RDSon drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C resistance - 48 55 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D drain D drain G gate S source D drain D drain Simplified outline 654 123 SOT457 (TSOP6) Graphic symbol D G S 017aaa094 Nexperia PMN48XP 20 V, 4.1 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name PMN48XP TSOP6 4. Marking Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Table 4. Marking codes Type number PMN48XP 5. Limiting values Markin...