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PMN55ENE Dataheets PDF



Part Number PMN55ENE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMN55ENE DatasheetPMN55ENE Datasheet (PDF)

PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch.

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PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5s VGS = 10 V; ID = 3.4 A; Tj = 25 °C Min Typ Max Unit - - 60 V -20 - 20 V [1] - - 4.5 A - 46 60 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. Nexperia PMN55ENE 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMN55ENE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking codes Type number PMN55ENE Marking code 3J PMN55ENE Product data sheet All information provided in this document is subject to legal disclaimers. 14 December 2017 © Nexperia B.V. 2017. All rights reserved 2 / 15 Nexperia PMN55ENE 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5s VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source Drain Diode IS source current Tsp = 25 °C Tamb = 25 °C [1] [1] [1] [2] [1] [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint. 120 017aaa123 120 Pder (%) Ider (%) 80 80 Min Max Unit - 60 V -20 20 V - 4.5 A - 3.4 A - 2.2 A - 14 A - 560 mW - 1.4 W - 6.25 W -55 150 °C -55 150 °C -65 150 °C - 1.4 A 017aaa124 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature PMN55ENE Product data sheet All information prov.


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