Document
PMN55ENE
60 V, N-channel Trench MOSFET
14 December 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Logic-level compatible • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5s
VGS = 10 V; ID = 3.4 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
[1] - - 4.5 A
- 46 60 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMN55ENE
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN55ENE
TSOP6
Description plastic surface-mounted package (TSOP6); 6 leads
Version SOT457
7. Marking
Table 4. Marking codes Type number PMN55ENE
Marking code 3J
PMN55ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2017
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMN55ENE
60 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot total power dissipation Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source Drain Diode
IS source current
Tsp = 25 °C Tamb = 25 °C
[1] [1] [1] [2] [1]
[1]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
120
017aaa123
120
Pder (%)
Ider (%)
80 80
Min Max Unit
- 60 V
-20 20
V
- 4.5 A
- 3.4 A
- 2.2 A
- 14 A
- 560 mW
- 1.4 W
- 6.25 W
-55 150 °C
-55 150 °C
-65 150 °C
- 1.4 A
017aaa124
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
PMN55ENE
Product data sheet
All information prov.