PMN70EPE

PMN70EPE 30 V, P-channel Trench MOSFET 23 May 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipation capability of 1.4 W ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -10 V; Tamb = 25 °C; t ≤ 5 s VGS = -10 V; ID = -3.3 A; Tj = 25 °C Min Typ Max - - -30 -20 - 20 [1] - - -4.4 - 60 80 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMN70EPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMN70EPE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7...