PMPB20EN
30 V, N-channel Trench MOSFET
12 July 2018
Product data sheet
1. General description
N-channel enhancement mo...
PMPB20EN
30 V, N-channel Trench MOSFET
12 July 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 7 A; Tj = 25 °C
Min Typ Max
- - 30
-20 -
20
[1] - - 10.4
- 16.5 19.5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
PMPB20EN
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
16 7
25
Graphic symbol
D
G
384
Transparent top view
DFN2020M...