PMPB24EP

PMPB24EP 30 V, P-channel Trench MOSFET 22 October 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -10 V; Tamb = 25 °C; t ≤ 5 s VGS = -10 V; ID = -6.4 A; Tj = 25 °C Min Typ Max - - -30 -20 - 20 [1] - - -9.5 - 24 28 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMPB24EP 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 16 7 25 384 Transparent top view DFN2020MD-6 (SOT1220) Graphic sy...