PMPB29XNE

PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated, 100% solderable side pads for optical solder inspection 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 5 A; Tj = 25 °C Min Typ Max Unit - - 30 V -12 - 12 V [1] - - 5 A - 28 33 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMPB29XNE 30 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 384 Transparent top view DFN2020MD-6 (SOT1220) G D S 017aaa255 6. Orderin...