PMPB29XNEA

PMPB29XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 5 A; Tj = 25 °C Min Typ Max Unit - - 30 V -8 - 8 V [1] - - 5 A - 28 33 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMPB29XNEA 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 16 7 25 384 Transparent top view DFN2020MD-6 (SOT1220) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description PMPB29XNEA DFN2020MD-6 DFN20...