PMT200EPE

PMT200EPE 70 V, P-channel Trench MOSFET 14 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -10 V; Tamb = 25 °C VGS = -10 V; ID = -2.4 A; Tj = 25 °C Min Typ Max - - -70 -20 - 20 [1] - - -2.4 - 130 167 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMT200EPE 70 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain Simplified outline 4 123 SC-73 (SOT223) Graphic symbol D G S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMT200EPE SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7. Marking Table 4. Marking codes Type number PMT2...