PMT280ENEA
100 V N-channel Trench MOSFET
14 July 2016
Product data sheet
1. General description
N-channel enhancement ...
PMT280ENEA
100 V N-channel Trench MOSFET
14 July 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified
3. Applications
Relay driver LED backlight driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
Min Typ Max Unit
- - 100 V
-20 -
20 V
[1] - - 1.5 A
- 285 385 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMT280ENEA
100 V N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
D
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMT280ENEA
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version SOT223
7. Marking
Table 4. Marking code...