PMV30UN2
20 V, N-channel Trench MOSFET
24 April 2014
Product data sheet
1. General description
N-channel enhancement m...
PMV30UN2
20 V, N-channel Trench MOSFET
24 April 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1000 mW
3. Applications
LED driver Power management Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 5.4 A
- 24 32 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMV30UN2
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S 017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV30UN2
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number
PMV30UN2
Marking code [1]
%K6
[1] % = placeholder ...