PMV32UP

PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V drain-source on-state resistance rated  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj = 25 °C voltage VGS gate-source voltage ID drain current Static characteristics VGS = -4.5 V; Tamb = 25 °C RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C Min Typ Max Unit - - -20 V -8 - 8V [1] - - -4 A - 32 36 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMV32UP 20 V, 4 A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline 3 12 SOT23 (TO-236AB) Graphic symbol D G S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name PMV32UP TO-236AB 4. Marking Description plastic surface-mounted package; 3 leads Version SOT23 Table 4. Marking codes Type number PMV32UP [1] % = placeholder for manufac...