PMV42ENE

PMV42ENE 30 V, N-channel Trench MOSFET 16 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Low on-state resistance Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Enhanced power dissipation capability of 1 W 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 4.4 A; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 5.1 A - 29 36 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMV42ENE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMV42ENE TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7. Marking Table 4. Marking codes Type number PMV42ENE Marki...