PMZ1200UPE
30 V, P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
P-channel enhancement...
PMZ1200UPE
30 V, P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm
3. Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -410 mA; Tj = 25 °C
[1]
Min Typ Max Unit - - -30 V
-8 -
8V
- - -410 mA
- 1.2 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
PMZ1200UPE
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
1 3
2
Transparent top view
DFN1006-3 (SOT883)
Graphic symbol
G
D
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ1200UPE
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small pla...