PMZB320UPE
30 V, P-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
P-channel enhancement...
PMZB320UPE
30 V, P-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm
3. Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
Min Typ Max Unit
- - -30 V
-8 -
8V
[1] - - -1 A
- 430 510 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
PMZB320UPE
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
Graphic symbol
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
G
D
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZB320UPE
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3 solder l...