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PMZB600UNE Dataheets PDF



Part Number PMZB600UNE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMZB600UNE DatasheetPMZB600UNE Datasheet (PDF)

PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ .

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PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V [1] - - 0.6 A - 470 620 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia PMZB600UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 1 3 2 Transparent top view DFN1006B-3 (SOT883B) G D S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMZB600UNE DFN1006B-3 Description DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm Version SOT883B 7. Marking Table 4. Marking codes Type number PMZB600UNE PIN 1 INDICATION Marking code 0101 1000 READING DIRECTION READING EXAMPLE: 0111 1011 READING DIRECTION Fig. 1. DFN1006B-3 (SOT883B) binary marking code description MARKING CODE (EXAMPLE) 006aac673 PMZB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 21 July 2014 © Nexperia B.V. 2017. All rights reserved 2 / 14 Nexperia PMZB600UNE 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current Tsp = 25 °C Tamb = 25 °C [1] [1] [2] [1] [1] Min Max Unit - 20 V -8 8 V - 0.6 A - 0.4 A - 2.5 A - 360 mW - 715 mW - 2700 mW -55 150 °C -55 150 °C -65 150 °C - 0.4 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 120 017aaa123 120 017a.


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