Document
PMZB600UNE
20 V, N-channel Trench MOSFET
21 July 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
Min Typ Max Unit - - 20 V
-8 -
8V
[1] - - 0.6 A
- 470 620 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
PMZB600UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
Graphic symbol
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
G
D
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZB600UNE
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
Version SOT883B
7. Marking
Table 4. Marking codes Type number PMZB600UNE
PIN 1 INDICATION
Marking code 0101 1000
READING DIRECTION
READING EXAMPLE: 0111 1011
READING DIRECTION
Fig. 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE (EXAMPLE)
006aac673
PMZB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 July 2014
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMZB600UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C Tamb = 25 °C
[1] [1] [2] [1]
[1]
Min Max Unit - 20 V
-8 8
V
- 0.6 A
- 0.4 A
- 2.5 A
- 360 mW - 715 mW
- 2700 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 0.4 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120
017aaa123
120
017a.