2N7002BK

2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA - - 60 V - - ±20 V [1] - - 350 mA - 1 1.6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Simplified outline Graphic symbol 3D 1 2G S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description 2N7002BK TO-236AB plastic surface-mounted package; 3 leads 4. Marking Table 4. Marking codes Type number 2N7002BK [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made...