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2N7002BKV Dataheets PDF



Part Number 2N7002BKV
Manufacturers nexperia
Logo nexperia
Description dual N-channel MOSFET
Datasheet 2N7002BKV Datasheet2N7002BKV Datasheet (PDF)

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-.

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2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA - - 60 V - - ±20 V [1] - - 340 mA - 1 1.6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source 1 gate 1 drain 2 source 2 gate 2 drain 1 Simplified outline Graphic symbol 654 1 6 123 2 5 34 017aaa055 3. Ordering information Table 3. Ordering information Type number Package Name Description 2N7002BKV - plastic surface-mounted package; 6 leads 4. Marking Table 4. Marking codes Type number 2N7002BKV Marking code ZG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per transistor VDS drain-source voltage Tamb = 25 °C - VGS gate-source voltage Tamb = 25 °C - ID drain current VGS = 10 V [1] Tamb = 25 °C - Tamb = 100 °C - IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs - Version SOT666 Max Unit 60 V ±20 V 340 mA 240 mA 1.2 A 2N7002BKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 © Nexperia B.V. 2017. All rights reserved 2 of 16 Nexperia 120 Pder (%) 80 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Ptot total power dissipation Tamb = 25 °C [2] [1] - Source-drain diode Tsp = 25 °C - IS source current ESD maximum rating Tamb = 25 °C [1] - VESD electrostatic discharge human body model voltage [3] - Per device Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb = 25 °C [2] - −55 −65 Max 350 410 1140 Unit mW mW mW 340 mA 2000 V 525 150 +150 +150 mW °C °C °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa001 120 Ider (%) 80 017aaa002 40 40 0 −75 −25 25 75 125 175 Tamb (°C) Fig 1. Pder = --------P----t-o---t------- × 100 % Pt o t ( 25 ° C ) Normalized total power dissipation as a function of ambient temperature 0 −75 −25 25 75 125 175 Tamb (°C) Fig 2. Ider = --------I--D--------- × 100 % I D ( 25 ° C ) Normalized continuous drain current as a function of ambient temperature 2N7002BKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 © Nexperia B.V. 2017. All rights reserved 3 of 16 Nexperia 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 10 ID (A) 1 10−1 10−2 Limit RDSon = VDS/ID 017aaa059 (1) (2) (3) (4) (5) (6) 10−3 10−1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per transistor Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) Per device Rth(j-a) thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions in free air in free air Min Typ Max Unit [1] - 315 360 K/W [2] - 265 305 K/W - - 110 K/W [1] - - 240 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 September 2010 © Nexperia B.V. 2017. All rights reserved 4 of 16 Nexperia 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 103 Zth(j-a) (K/W) 102 duty .


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