Document
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Rev. 2 — 22 September 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS VGS ID
RDSon
drain-source voltage gate-source voltage drain current
drain-source on-state resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C; VGS = 10 V
Tj = 25 °C; VGS = 10 V; ID = 500 mA
- - 60 V - - ±20 V [1] - - 340 mA
- 1 1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
Pinning Symbol S1 G1 D2 S2 G2 D1
Description source 1 gate 1 drain 2 source 2 gate 2 drain 1
Simplified outline Graphic symbol
654
1
6
123
2
5
34
017aaa055
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002BKV -
plastic surface-mounted package; 6 leads
4. Marking
Table 4. Marking codes Type number 2N7002BKV
Marking code ZG
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VDS
drain-source voltage
Tamb = 25 °C
-
VGS
gate-source voltage
Tamb = 25 °C
-
ID drain current
VGS = 10 V
[1]
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 μs
-
Version SOT666
Max Unit 60 V ±20 V 340 mA 240 mA 1.2 A
2N7002BKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 September 2010
© Nexperia B.V. 2017. All rights reserved
2 of 16
Nexperia
120 Pder (%)
80
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot total power dissipation Tamb = 25 °C
[2] [1] -
Source-drain diode
Tsp = 25 °C
-
IS source current ESD maximum rating
Tamb = 25 °C
[1] -
VESD
electrostatic discharge human body model voltage
[3] -
Per device
Ptot Tj Tamb Tstg
total power dissipation junction temperature ambient temperature storage temperature
Tamb = 25 °C
[2] -
−55 −65
Max 350 410 1140
Unit mW mW mW
340 mA
2000 V
525 150 +150 +150
mW °C °C °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
017aaa001
120
Ider (%)
80
017aaa002
40 40
0 −75 −25
25
75 125 175 Tamb (°C)
Fig 1.
Pder
=
--------P----t-o---t------- × 100 % Pt o t ( 25 ° C )
Normalized total power dissipation as a function of ambient temperature
0 −75 −25
25
75 125 175 Tamb (°C)
Fig 2.
Ider
=
--------I--D--------- × 100 % I D ( 25 ° C )
Normalized continuous drain current as a function of ambient temperature
2N7002BKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 September 2010
© Nexperia B.V. 2017. All rights reserved
3 of 16
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
10 ID (A)
1
10−1
10−2
Limit RDSon = VDS/ID
017aaa059
(1) (2)
(3) (4) (5) (6)
10−3 10−1
1
10 102 VDS (V)
IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-sp)
Per device Rth(j-a)
thermal resistance from junction to solder point
thermal resistance from junction to ambient
Conditions in free air
in free air
Min Typ Max Unit
[1] - 315 360 K/W [2] - 265 305 K/W
- - 110 K/W
[1] - - 240 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 September 2010
© Nexperia B.V. 2017. All rights reserved
4 of 16
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
103
Zth(j-a) (K/W)
102
duty .