BSS138P

BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID Quick reference data Parameter drain-source voltage gate-source voltage drain current RDSon drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA Min Typ Max Unit - - 60 V - - ±20 V [1] - - 360 mA [2] - 0.9 1.6 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. Nexperia BSS138P 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain Simplified outline Graphic symbol 3D G 12 mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name Description BSS138P TO-236AB plastic surface-mounted package; 3 leads 4. Marking Table 4. Marking codes Type number BSS138P [1] * = placeholder for manufacturing site code 5. ...