BSS138PS

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current RDSon drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA Min Typ Max Unit - - 60 V - - ±20 V [1] - - 320 mA [2] - 0.9 1.6 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. Nexperia BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source1 gate1 drain2 source2 gate2 drain1 Simplified outline Graphic symbol 654 D1 D2 123 S1 G1 S2 G2 msd901 3. Ordering information Table 3. Ordering information Type number Package Name Description BSS138PS SC-88 plastic surface-mounted package; 6 leads 4. Markin...