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BSS84AKS Dataheets PDF



Part Number BSS84AKS
Manufacturers nexperia
Logo nexperia
Description dual P-channel MOSFET
Datasheet BSS84AKS DatasheetBSS84AKS Datasheet (PDF)

BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 1 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ High-side loadsw.

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BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 1 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -10 V; Tamb = 25 °C Static characteristics (per transistor) RDSon drain-source on-state resistance VGS = -10 V; ID = -100 mA; Tj = 25 °C Min Typ Max Unit -20 [1] - - -50 V 20 V -160 mA - 4.5 7.5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 source 1 G1 gate 1 D2 drain 2 S2 source 2 G2 gate 2 D1 drain 1 Simplified outline 654 Graphic symbol D1 D2 123 SOT363 (TSSOP6) G1 G2 S1 S2 sym147 3. Ordering information Table 3. Ordering information Type number Package Name BSS84AKS TSSOP6 4. Marking Description plastic surface-mounted package; 6 leads Table 4. Marking codes Type number BSS84AKS [1] % = placeholder for manufacturing site code Marking code[1] %VY Version SOT363 BSS84AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 © Nexperia B.V. 2017. All rights reserved 2 of 17 Nexperia BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current IDM peak drain current Ptot total power dissipation Tj = 25 °C VGS = -10 V; Tamb = 25 °C VGS = -10 V; Tamb = 100 °C Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Per device Ptot total power dissipation Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current ESD maximum rating VESD electrostatic discharge voltage Tsp = 25 °C Tamb = 25 °C Tamb = 25 °C HBM Min Max Unit -20 [1] [1] [2] [1] - -50 20 -160 -100 -640 280 320 990 V V mA mA mA mW mW mW [2] -55 -55 -65 445 mW 150 °C 150 °C 150 °C [1] - -160 mA [3] - 1000 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. BSS84AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 © Nexperia B.V. 2017. All rights reserved 3 of 17 Nexperia 120 Pder (%) 80 001aao121 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET 120 Ider (%) 80 001aao122 40 40 0 -75 -25 25 75 125 175 Tj (°C) 0 -75 -25 25 75 125 175 Tj (°C) Fig 1. Normalized total power dissipation as a function of junction temperature -1 ID (A) -10-1 -10-2 Fig 2. Normalized continuous drain current as a function of junction temperature 001aao139 (1) (2) (3) (4) (5) (6) -10-3 -10-1 -1 -10 -102 VDS (V) IDM is single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage BSS84AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 © Nexperia B.V. 2017. All rights reserved 4 of 17 Nexperia BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per device Rth(j-a) thermal resistance from junction to ambient Per transistor Rth(j-a) thermal resistance from junction to ambient Conditions in free air in free air Rth(j-sp) thermal resistance from junction to solder point Min Typ Max [1] - - 300 [1] [2] - - 390 445 340 390 - 130 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Unit K/W K/W K/W K/W 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 0.75 0.33 0.2 0.1 0.05 0 0.02 10 0.01 017aaa034 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impeda.


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