DatasheetsPDF.com

BUK753R1-40E Dataheets PDF



Part Number BUK753R1-40E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK753R1-40E DatasheetBUK753R1-40E Datasheet (PDF)

BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level.

  BUK753R1-40E   BUK753R1-40E


Document
BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 40 V [1] - - 100 A - - 234 W - 2.6 3.1 mΩ - 22 - nC Nexperia BUK753R1-40E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate mb 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D G mbb076 S 123 TO-220AB (SOT78A) 3. Ordering information Table 3. Ordering information Type number Package Name BUK753R1-40E TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A 4. Marking Table 4. Marking codes Type number BUK753R1-40E Marking code BUK753R1-40E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage Tj ≤ 175 °C; DC ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 [1] [1] BUK753R1-40E Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2012 Min Max Unit - 40 V - 40 V -20 20 V - 100 A - 100 A - 798 A © Nexperia B.V. 2017. All rights reserved 2 / 13 Nexperia BUK753R1-40E N-channel TrenchMOS standard level FET Symbol Parameter Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tmb = 25 °C; Fig. 2 Min Max Unit - 234 W -55 175 °C -55 175 °C Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C [1] - ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [2][3] - 100 A 798 A 419 mJ [1] Continuous current is limited by package. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Refer to application note AN10273 for further information. 200 ID (A) 150 100 (1) 003aah195 120 Pder (%) 80 03aa16 40 50 0 0 50 100 150 Tmb(°C) 200 (1) Capped at 120A due to package Fig. 1. Continuous drain current as a function of mounting base temperature 0 0 50 100 150 200 Tmb (°C) Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK753R1-40E Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2012 © Nexperia B.V. 2017. All rights reserved 3 / 13 Nexperia BUK753R1-40E N-channel TrenchMOS standard level FET 103 IAL (A) 102 10 1 003aah196 (1) (2) (3) 10-1 10-3 10-2 10-1 1 tAL(ms) 10 Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time 103 ID (A) 102 10 1 Limit RDSon= VDS/ ID DC 003aah197 tp =10 µ s 100 µ s 1 ms 10 ms 100 ms 10-1 10-1 1 10 VDS(V) 102 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 vertical in still air BUK753R1-40E Product data sheet All information provided in this document is subject to legal disclaimers. 11 September 2012 Min Typ Max Unit - - 0.64 K/W - 60 - K/W © Nexperia B.V. 2017. All rights reserved 4 / 13 Nexperia BUK753R1-40E N-channel TrenchMOS standard level FET 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 single shot 003aah198 P δ= tp T 10-3 10-6 10-5 10-4 10-3 .


BUK664R4-55C BUK753R1-40E BUK755R4-100E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)