Document
BUK753R1-40E
N-channel TrenchMOS standard level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit - - 40 V [1] - - 100 A - - 234 W
- 2.6 3.1 mΩ
- 22 - nC
Nexperia
BUK753R1-40E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to drain
Graphic symbol
D
G mbb076 S
123
TO-220AB (SOT78A)
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK753R1-40E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
Version SOT78A
4. Marking
Table 4. Marking codes Type number BUK753R1-40E
Marking code BUK753R1-40E
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
[1] [1]
BUK753R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
Min Max Unit - 40 V
- 40 V
-20 20
V
- 100 A
- 100 A
- 798 A
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Nexperia
BUK753R1-40E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions Tmb = 25 °C; Fig. 2
Min Max Unit - 234 W -55 175 °C -55 175 °C
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1] -
ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3
[2][3]
-
100 A 798 A
419 mJ
[1] Continuous current is limited by package. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Refer to application note AN10273 for further information.
200 ID (A) 150
100
(1)
003aah195
120
Pder (%)
80
03aa16
40 50
0 0 50 100 150 Tmb(°C) 200
(1) Capped at 120A due to package Fig. 1. Continuous drain current as a function of
mounting base temperature
0 0 50 100 150 200 Tmb (°C)
Fig. 2. Normalized total power dissipation as a function of mounting base temperature
BUK753R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
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Nexperia
BUK753R1-40E
N-channel TrenchMOS standard level FET
103 IAL (A) 102
10
1
003aah196
(1) (2) (3)
10-1 10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103 ID (A) 102
10
1
Limit RDSon= VDS/ ID
DC
003aah197
tp =10 µ s 100 µ s
1 ms 10 ms 100 ms
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions Fig. 5
vertical in still air
BUK753R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
Min Typ Max Unit - - 0.64 K/W
- 60 - K/W
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Nexperia
BUK753R1-40E
N-channel TrenchMOS standard level FET
1
Zth(j-mb) δ = 0.5 (K/W)
0.2 10-1 0.1
0.05 0.02 10-2 single shot
003aah198
P
δ=
tp T
10-3 10-6
10-5
10-4
10-3
.