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BUK7608-55A Dataheets PDF



Part Number BUK7608-55A
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK7608-55A DatasheetBUK7608-55A Datasheet (PDF)

BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 — 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for sta.

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BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 — 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Min Typ Max Unit - - 55 V [1] - - 75 A - - 254 W - - 16 mΩ - 6.8 8 mΩ Nexperia BUK7608-55A N-channel TrenchMOS standard level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge VGS = 0 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 [1] Continuous current is limited by package. 2. Pinning information Min Typ Max Unit - - 670 mJ - 35 - nC Table 2. Pin 1 2 3 mb Pinning information Symbol Description Simplified outline G gate D drain[1] mb S source D mounting base; connected to drain 2 13 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name BUK7608-55A D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) BUK7608-55A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 © Nexperia B.V. 2017. All rights reserved 2 of 14 Nexperia BUK7608-55A N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Min Typ Max Unit Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ - - 55 V - - 55 V -20 - 20 V Tmb = 25 °C; VGS = 10 V; see Figure 1; [1] - - 126 A see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] - - 75 A Tmb = 25 °C; VGS = 10 V; see Figure 1; [2] - - 75 A see Figure 3 IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - - 504 A Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25 °C; see Figure 2 --55 -55 - 254 W 175 °C 175 °C IS source current Tmb = 25 °C [2] - - 75 A [1] - - 126 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - - 504 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped - - 670 mJ [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. BUK7608-55A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 © Nexperia B.V. 2017. All rights reserved 3 of 14 Nexperia 140 ID (A) 120 03nh50 100 80 60 40 Capped at 75 A due to package 20 0 25 50 75 100 125 150 175 200 Tmb (°C) BUK7608-55A N-channel TrenchMOS standard level FET 120 Pder (%) 80 03na19 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 103 ID (A) RDSon = VDS / ID 102 Capped at 75 A due to package 10 Fig 2. Normalized total power dissipation as a function of mounting base temperature 03nh48 tp = 10 μs 100 μs 1 ms DC 10 ms 100 ms 1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7608-55A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 14 June 2010 © Nexperia B.V. 2017. All rights reserved 4 of 14 Nexperia BUK7608-55A N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions thermal resistance from junction see Figure 4 to mounting base thermal resistance from junction mounted on pr.


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