Document
BUK7608-55A
N-channel TrenchMOS standard level FET
Rev. 03 — 14 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
Min Typ Max Unit - - 55 V [1] - - 75 A - - 254 W
- - 16 mΩ
- 6.8 8 mΩ
Nexperia
BUK7608-55A
N-channel TrenchMOS standard level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
VGS = 0 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit - - 670 mJ
- 35 - nC
Table 2. Pin 1 2 3 mb
Pinning information
Symbol Description
Simplified outline
G gate D drain[1]
mb
S source
D mounting base; connected to drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7608-55A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped)
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© Nexperia B.V. 2017. All rights reserved
2 of 14
Nexperia
BUK7608-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
- - 55 V - - 55 V
-20 -
20 V
Tmb = 25 °C; VGS = 10 V; see Figure 1; [1] - - 126 A see Figure 3
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] - - 75 A
Tmb = 25 °C; VGS = 10 V; see Figure 1; [2] - - 75 A see Figure 3
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
- - 504 A
Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode
Tmb = 25 °C; see Figure 2
--55 -55 -
254 W 175 °C 175 °C
IS
source current
Tmb = 25 °C
[2] - - 75 A
[1] - - 126 A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
- - 504 A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω;
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 670 mJ
[1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package.
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© Nexperia B.V. 2017. All rights reserved
3 of 14
Nexperia
140 ID (A)
120
03nh50
100
80
60
40 Capped at 75 A due to package
20
0
25 50 75 100 125 150 175 200 Tmb (°C)
BUK7608-55A
N-channel TrenchMOS standard level FET
120
Pder (%)
80
03na19
40
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
103
ID (A)
RDSon = VDS / ID
102 Capped at 75 A due to package
10
Fig 2. Normalized total power dissipation as a function of mounting base temperature
03nh48
tp = 10 μs 100 μs
1 ms DC
10 ms 100 ms
1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© Nexperia B.V. 2017. All rights reserved
4 of 14
Nexperia
BUK7608-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction see Figure 4 to mounting base
thermal resistance from junction mounted on pr.