BUK7610-55AL

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Stable operation in linear mode „ Q101 compliant „ TrenchMOS technology 1.3 Applications „ 12 V and 24 V loads „ DC linear motor control „ Automotive systems „ Repetitive clamped inductive switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 4 and 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 [1] Continuous current is limited by package. Min Typ Max Unit [1] - - 75 A - - 300 W - - 1.1 J - 8.5 10 mΩ Nexperia BUK7610-55AL N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain 3. Orderi...