BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 3 — 27 December 2011
Product data sheet
1. Product profile
1....
BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 3 — 27 December 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source voltage drain current
Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 13
ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit - - 75 V - - 75 A
- - 157 W
-
11.7 13
mΩ
- 15 - nC
- - 125 mJ
Nexperia
BUK7613-75B
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