N-channel MOSFET
BUK761R6-40E
N-channel TrenchMOS standard level FET
5 September 2013
Product data sheet
1. General description
Standar...
Description
BUK761R6-40E
N-channel TrenchMOS standard level FET
5 September 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit - - 40 V [1] - - 120 A - - 349 W
- 1.3 1.57 mΩ
- 48.2 - nC
Nexperia
BUK761R6-40E
N-channel TrenchMOS standard level FET
5. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description
Simplif...
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