BUK763R6-40C

BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Avalanche robust  Suitable for standard level gate drive  Suitable for thermally demanding environment up to 175°C rating 1.3 Applications  12V Motor, lamp and solenoid loads  High performance automotive power systems  High performance Pulse Width Modulation (PWM) applications Nexperia BUK763R6-40C N-channel TrenchMOS standard level FET 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14; see Figure 13 [1] C...