BUK7640-100A

BUK7640-100A N-channel TrenchMOS standard level FET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C ID = 26 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 100 V - - 37 A - - 138 W - 30 40 mΩ - - 31 mJ Nexperia BUK7640-100A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain[1] S source D mounting base; connected to drain [1] drain (D) 3. Ordering information Simplified outline mb 2 13 SOT404 (D2PAK) Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name BUK7640-100A D2PAK 4. Limiting values Descri...