BUK7E2R6-60E

BUK7E2R6-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QGD gate-drain charge ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 60 V [1] - - 120 A - - 349 W - 2.1 2.6 mΩ - 45.5 - nC Nexperia BUK7E2R6-60E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Descript...