dual N-channel MOSFET
BUK7K5R6-30E
Dual N-channel 30 V, 5.6 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General descrip...
Description
BUK7K5R6-30E
Dual N-channel 30 V, 5.6 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit - - 30 V - - 40 A
- 4.76 5.6 mΩ
- 9.5 - nC
Nexperia
BUK7K5R6-30E
Dual N-channel 30 V, 5.6 mΩ standard level MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1
Simplified outline
8765
Graphic...
Similar Datasheet