BUK7Y13-40B

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ 175 °C rated „ Suitable for standard level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ Automotive ABS systems „ Fuel pump and injection „ Air bag „ Automotive transmission control „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference Parameter drain-source voltage drain current Ptot total power dissipation Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 ID = 10 A; VDS = 32 V; VGS = 10 V; see Figure 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 and 12 ID = 58 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 40 V - - 58 A - - 85 W - 5 - nC - 11 13 mΩ - - 85 mJ Nexperia BUK7Y13-40B N-channel TrenchMOS standar...