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BUK7Y53-100B Dataheets PDF



Part Number BUK7Y53-100B
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK7Y53-100B DatasheetBUK7Y53-100B Datasheet (PDF)

BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Q101 compliant „ Suitable for standard leve.

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BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ DC-to-DC converters „ Engine management „ General purpose power switching „ Solenoid drivers „ Transmission control 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ Max Unit - - 100 V - - 24.8 A - - 85 W - 40 53 mΩ Nexperia BUK7Y53-100B N-channel TrenchMOS standard level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 24.8 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge ID = 10 A; VDS = 80 V; VGS = 10 V; see Figure 14 Min Typ Max Unit - - 81 mJ - 8.5 - nC 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description c source S source S source G gate D mounting base; connected to drain Simplified outline mb 1234 SOT669 (LFPAK) 3. Ordering information Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name BUK7Y53-100B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 BUK7Y53-100B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 2 of 14 Nexperia BUK7Y53-100B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 IDM peak drain current Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4 Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25 °C; see Figure 2 IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 24.8 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped see Figure 3 [1][2][3] Min -20 - - -55 -55 - - - [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. Max Unit 100 V 100 V 20 V 24.8 A 17.6 A 99 A 85 W 175 °C 175 °C 24.8 A 99 A 81 mJ -J BUK7Y53-100B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 3 of 14 Nexperia BUK7Y53-100B N-channel TrenchMOS standard level FET 003aac515 30 120 ID (A) Pder (%) 20 80 03na19 10 40 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 102 IAL (A) 10 1 10-1 Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac494 (1) (2) (3) 10-2 10-3 10-2 10-1 1 10 tAL (ms) Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7Y53-100B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 © Nexperia B.V. 2017. All rights reserved 4 of 14 Nexperia BUK7Y53-100B N-channel TrenchMOS standard level FET 103 ID (A) 102 10 1 10-1 10-1 Limit RDSon = VDS / ID DC 1 10 003aad637 tp = 10 μs 100 μs 1 ms 10 ms 100 ms 102 VDS (V) 103 Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Mi.


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