Document
BUK7Y53-100B
N-channel TrenchMOS standard level FET
Rev. 3 — 13 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant Suitable for standard level gate drive
sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters Engine management
General purpose power switching Solenoid drivers Transmission control
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13
Min Typ Max Unit - - 100 V - - 24.8 A - - 85 W
- 40 53 mΩ
Nexperia
BUK7Y53-100B
N-channel TrenchMOS standard level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 24.8 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 10 A; VDS = 80 V; VGS = 10 V; see Figure 14
Min Typ Max Unit - - 81 mJ
- 8.5 - nC
2. Pinning information
Table 2. Pin 1 2 3 4 mb
Pinning information Symbol Description c source S source S source G gate D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7Y53-100B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK7Y53-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 October 2010
© Nexperia B.V. 2017. All rights reserved
2 of 14
Nexperia
BUK7Y53-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4
Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current ISM peak source current Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
EDS(AL)R
repetitive drain-source avalanche energy
Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C
ID = 24.8 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
see Figure 3
[1][2][3]
Min -20 -
-
-55 -55
-
-
-
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information.
Max Unit 100 V 100 V 20 V 24.8 A
17.6 A 99 A
85 W 175 °C 175 °C
24.8 A 99 A
81 mJ
-J
BUK7Y53-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 October 2010
© Nexperia B.V. 2017. All rights reserved
3 of 14
Nexperia
BUK7Y53-100B
N-channel TrenchMOS standard level FET
003aac515
30 120 ID (A) Pder
(%)
20 80
03na19
10 40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
102 IAL (A)
10
1
10-1
Fig 2. Normalized total power dissipation as a function of mounting base temperature
003aac494
(1)
(2) (3)
10-2 10-3
10-2
10-1
1 10 tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y53-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 October 2010
© Nexperia B.V. 2017. All rights reserved
4 of 14
Nexperia
BUK7Y53-100B
N-channel TrenchMOS standard level FET
103 ID (A)
102
10
1
10-1 10-1
Limit RDSon = VDS / ID DC
1 10
003aad637
tp = 10 μs 100 μs
1 ms 10 ms 100 ms
102 VDS (V)
103
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5. Symbol Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions see Figure 5
Mi.