BUK9610-100B

BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage - - 100 V ID drain current VGS = 5 V; Tmb = 25 °C; [1] - - 75 A see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 300 W Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 8.3 9.7 mΩ 8.6 10 mΩ Nexperia BUK9610-100B N-channel TrenchMOS logic level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 100 V; ...