DatasheetsPDF.com

BUK9614-60E Dataheets PDF



Part Number BUK9614-60E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9614-60E DatasheetBUK9614-60E Datasheet (PDF)

BUK9614-60E N-channel TrenchMOS logic level FET 28 July 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater.

  BUK9614-60E   BUK9614-60E



Document
BUK9614-60E N-channel TrenchMOS logic level FET 28 July 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 15 A; VDS = 48 V; Fig. 13; Fig. 14 Min Typ Max Unit - - 60 V - - 56 A - - 96 W - 11.5 14 mΩ - 6.7 - nC Nexperia BUK9614-60E N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate mb 2 D drain 3 S source mb D mounting base; connected to drain 2 13 D2PAK (SOT404) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name BUK9614-60E D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 7. Marking Table 4. Marking codes Type number BUK9614-60E Marking code BUK9614-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 2 Tmb = 100 °C; VGS = 5 V; Fig. 2 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 Tstg storage temperature BUK9614-60E All information provided in this document is subject to legal disclaimers. Product data sheet 28 July 2016 [1][2] Min Max Unit - 60 V - 60 V -10 10 V -15 15 V - 96 W - 56 A - 40 A - 224 A -55 175 °C © Nexperia B.V. 2017. All rights reserved 2 / 13 Nexperia BUK9614-60E N-channel TrenchMOS logic level FET Symbol Parameter Tj junction temperature Source-drain diode IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Min Max Unit -55 175 °C Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C [3] - ID = 56 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 5 V; Tj(init) =.


BUK9612-55B BUK9614-60E BUK9616-75B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)