Document
BUK9614-60E
N-channel TrenchMOS logic level FET
28 July 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
3. Applications
• 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 15 A; VDS = 48 V;
Fig. 13; Fig. 14
Min Typ Max Unit - - 60 V - - 56 A - - 96 W
-
11.5 14
mΩ
- 6.7 - nC
Nexperia
BUK9614-60E
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to drain
2 13
D2PAK (SOT404)
Graphic symbol
D
G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9614-60E
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
Version SOT404
7. Marking
Table 4. Marking codes Type number BUK9614-60E
Marking code BUK9614-60E
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 2
Tmb = 100 °C; VGS = 5 V; Fig. 2
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
Tstg storage temperature
BUK9614-60E
All information provided in this document is subject to legal disclaimers.
Product data sheet
28 July 2016
[1][2]
Min Max Unit - 60 V
- 60 V
-10 10
V
-15 15
V
- 96 W
- 56 A
- 40 A
- 224 A
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 13
Nexperia
BUK9614-60E
N-channel TrenchMOS logic level FET
Symbol
Parameter
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions
Min Max Unit -55 175 °C
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
[3] -
ID = 56 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 5 V; Tj(init) =.